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Volumn 3, Issue , 2013, Pages

Individual Zn 2 SnO 4 -sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

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EID: 84888147852     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep03249     Document Type: Article
Times cited : (30)

References (36)
  • 1
    • 43549126477 scopus 로고    scopus 로고
    • Resistive switching in transition metal oxides
    • DOI 10.1016/S1369-7021(08)70119-6, PII S1369702108701196
    • Sawa, A. Resistive switching in transition metal oxides. Mater. Today. 11, 28-36 (2008) (Pubitemid 351680723)
    • (2008) Materials Today , vol.11 , Issue.6 , pp. 28-36
    • Sawa, A.1
  • 2
    • 76649133422 scopus 로고    scopus 로고
    • Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
    • Kwon, D. H. et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat. Nanotechnol. 5, 148-153 (2010)
    • (2010) Nat. Nanotechnol. , vol.5 , pp. 148-153
    • Kwon, D.H.1
  • 3
    • 38349103053 scopus 로고    scopus 로고
    • Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
    • Chang, W. Y. et al. Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications. Appl. Phys. Lett. 92, 022110 (2008)
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 022110
    • Chang, W.Y.1
  • 4
    • 84876059408 scopus 로고    scopus 로고
    • Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots
    • Yoon, J.H. et al.Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots. Adv. Mater. 25, 1987-1992 (2013)
    • (2013) Adv. Mater. , vol.25 , pp. 1987-1992
    • Yoon, J.H.1
  • 5
    • 84879123976 scopus 로고    scopus 로고
    • Oxide heterostructure resistive memory
    • Yang, Y. et al. Oxide heterostructure resistive memory. Nano Lett. 13, 2908-2915 (2013)
    • (2013) Nano Lett. , vol.13 , pp. 2908-2915
    • Yang, Y.1
  • 6
    • 84875674680 scopus 로고    scopus 로고
    • HfOx-based vertical resistive switching randomaccess memory suitable for bit-cost-effective three-dimensional cross-point architecture
    • Yu, S. M. et al. HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. ACS Nano 7, 2320-2325 (2013)
    • (2013) ACS Nano , vol.7 , pp. 2320-2325
    • Yu, S.M.1
  • 7
    • 77955878095 scopus 로고    scopus 로고
    • Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors
    • Son, J. Y. et al. Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors. ACS Nano 4, 3288-3292 (2010)
    • (2010) ACS Nano , vol.4 , pp. 3288-3292
    • Son, J.Y.1
  • 8
    • 84879412323 scopus 로고    scopus 로고
    • Ferroelectric-field-effect-enhanced electroresistance in metal/ ferroelectric/semiconductor tunnel junctions
    • Wen, Z. et al. Ferroelectric-field-effect-enhanced electroresistance in metal/ ferroelectric/semiconductor tunnel junctions. Nat. Mater. 12, 617-621 (2013)
    • (2013) Nat. Mater. , vol.12 , pp. 617-621
    • Wen, Z.1
  • 9
    • 79961054109 scopus 로고    scopus 로고
    • Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr0.2Ti0.8)O3 films
    • Pantel, D. et al. Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr0.2Ti0.8)O3 films. ACS Nano 5, 6032-6038 (2013)
    • (2013) ACS Nano , vol.5 , pp. 6032-6038
    • Pantel, D.1
  • 10
    • 0346215998 scopus 로고    scopus 로고
    • Resistive switching in metal-ferroelectric-metal junctions
    • Contreras, J. R. et al. Resistive switching in metal-ferroelectric-metal junctions. Appl. Phys. Lett. 83, 4595-4597 (2003)
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 4595-4597
    • Contreras, J.R.1
  • 11
    • 33644552106 scopus 로고    scopus 로고
    • Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications
    • Choi, D. et al. Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications. Appl. Phys. Lett. 88, 082904 (2006)
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 082904
    • Choi, D.1
  • 12
    • 78449303523 scopus 로고    scopus 로고
    • Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices
    • Muenstermann, R. et al. Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices. Adv. Mater. 22, 4819-4822 (2010)
    • (2010) Adv. Mater. , vol.22 , pp. 4819-4822
    • Muenstermann, R.1
  • 13
    • 34547346804 scopus 로고    scopus 로고
    • Nonvolatile memory elements based on organic materials
    • DOI 10.1002/adma.200602564
    • Scott, J. C. et al. Nonvolatile memory elements based on organic materials. Adv. Mater. 19, 1452-1463 (2007) (Pubitemid 47153147)
    • (2007) Advanced Materials , vol.19 , Issue.11 , pp. 1452-1463
    • Scott, J.C.1    Bozano, L.D.2
  • 14
    • 67650102619 scopus 로고    scopus 로고
    • Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges
    • Waser, R. et al. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632-2663 (2009)
    • (2009) Adv. Mater. , vol.21 , pp. 2632-2663
    • Waser, R.1
  • 15
    • 76649133422 scopus 로고    scopus 로고
    • Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
    • Kwon, D. H. et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat. Nanotechnol. 5, 148-153 (2010)
    • (2010) Nat. Nanotechnol. , vol.5 , pp. 148-153
    • Kwon, D.H.1
  • 16
    • 43349101629 scopus 로고    scopus 로고
    • Random circuit breaker network model for unipolar resistance switching
    • Chae, S. C. et al. Random circuit breaker network model for unipolar resistance switching. Adv. Mater. 20, 1154-1159 (2008)
    • (2008) Adv. Mater. , vol.20 , pp. 1154-1159
    • Chae, S.C.1
  • 17
    • 84866639057 scopus 로고    scopus 로고
    • ZnO12x Nanorod arrays/ZnO thin film bilayer structure: From homojunction diode and high-performance memristor to complementary 1D1R application
    • Huang, C. H. et al. ZnO12x Nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application. ACS Nano 6, 8407-8414 (2012)
    • (2012) ACS Nano , vol.6 , pp. 8407-8414
    • Huang, C.H.1
  • 18
    • 67049132739 scopus 로고    scopus 로고
    • Oxygen electromigration induced nonvolatile resistance switching at Ag/La2CuO41x interface
    • Shi, J. P. et al. Oxygen electromigration induced nonvolatile resistance switching at Ag/La2CuO41x interface. Appl. Phys. Lett. 94, 192103 (2009)
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 192103
    • Shi, J.P.1
  • 19
    • 83455172683 scopus 로고    scopus 로고
    • AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory
    • Yu, S. M. et al. AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory. Appl. Phys. Lett. 99, 232105 (2011)
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 232105
    • Yu, S.M.1
  • 20
    • 33750465155 scopus 로고    scopus 로고
    • Temperature dependence of current-voltage characteristics of Ag-La0.7Ca0.3MnO3-Pt heterostructures
    • Shang, D. S. et al. Temperature dependence of current-voltage characteristics of Ag-La0.7Ca0.3MnO3-Pt heterostructures. Appl. Phys. Lett. 89, 172102 (2006)
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 172102
    • Shang, D.S.1
  • 21
    • 79953890316 scopus 로고    scopus 로고
    • Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3
    • Chen, X. G. et al. Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3. Appl. Phys. Lett. 98, 122102 (2011)
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 122102
    • Chen, X.G.1
  • 22
    • 84863236872 scopus 로고    scopus 로고
    • Resistive Switching in single epitaxial ZnO nanoislands
    • Qi, J. et al. Resistive Switching in single epitaxial ZnO nanoislands. ACS Nano 6, 1051-1058 (2012)
    • (2012) ACS Nano , vol.6 , pp. 1051-1058
    • Qi, J.1
  • 23
    • 45149087197 scopus 로고    scopus 로고
    • Characteristics and mechanism of conduction/set process in TiN/ ZnO/Pt resistance switching random-access memories
    • Xu, N. et al. Characteristics and mechanism of conduction/set process in TiN/ ZnO/Pt resistance switching random-access memories. Appl. Phys. Lett. 92, 232112 (2008)
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 232112
    • Xu, N.1
  • 24
    • 84881090664 scopus 로고    scopus 로고
    • Engineering electrodeposited ZnO films and their memristive switching performance
    • Zoolfakar, A. S. et al. Engineering electrodeposited ZnO films and their memristive switching performance. Phys. Chem. Chem. Phys. 15, 10376-10384 (2013)
    • (2013) Phys. Chem. Chem. Phys. , vol.15 , pp. 10376-10384
    • Zoolfakar, A.S.1
  • 25
    • 79960052135 scopus 로고    scopus 로고
    • Characteristics of multilevel bipolar resistive switching in Au/ZnO/ ITO devices on glass
    • Han, Y. et al. Characteristics of multilevel bipolar resistive switching in Au/ZnO/ ITO devices on glass. Microelectr. Eng. 88, 2608-2610 (2011)
    • (2011) Microelectr. Eng. , vol.88 , pp. 2608-2610
    • Han, Y.1
  • 26
    • 84863115846 scopus 로고    scopus 로고
    • High uniformity of resistive switching characteristics in a Cr/ ZnO/Pt device
    • Chang,W. Y. et al. High uniformity of resistive switching characteristics in a Cr/ ZnO/Pt device. J. Electrochem. Soc. 159, G29-G32 (2012)
    • (2012) J. Electrochem. Soc. , vol.159
    • Changw, Y.1
  • 27
    • 79957846221 scopus 로고    scopus 로고
    • Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments
    • Fei, Z. G. et al. Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments. Nanotechnology 22, 275204 (2011)
    • (2011) Nanotechnology , vol.22 , pp. 275204
    • Fei, Z.G.1
  • 28
    • 84862933503 scopus 로고    scopus 로고
    • Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure
    • Chen, C. et al. Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure. J. Appl. Phys. 111, 013702 (2012)
    • (2012) J. Appl. Phys. , vol.111 , pp. 013702
    • Chen, C.1
  • 30
    • 77956695151 scopus 로고    scopus 로고
    • Photoelectrochemical study of the band structure of Zn2SnO4 prepared by the hydrothermal method
    • Alpuche-Aviles, M. A. et al. Photoelectrochemical study of the band structure of Zn2SnO4 prepared by the hydrothermal method. J. Am. Chem. Soc. 131, 3216-3224 (2009)
    • (2009) J. Am. Chem. Soc. , vol.131 , pp. 3216-3224
    • Alpuche-Aviles, M.A.1
  • 31
    • 77952347658 scopus 로고    scopus 로고
    • Resistive-switching memory effects of NiO Nanowire/metal junctions
    • Oka, K. et al. Resistive-switching memory effects of NiO Nanowire/metal junctions. J. Am. Chem. Soc. 132, 6634-6635 (2010)
    • (2010) J. Am. Chem. Soc. , vol.132 , pp. 6634-6635
    • Oka, K.1
  • 32
    • 77951064806 scopus 로고    scopus 로고
    • Resistive switchingmultistate nonvolatile memory effects in a single cobalt oxide nanowire
    • Nagashima, K. et al. Resistive switchingmultistate nonvolatile memory effects in a single cobalt oxide nanowire. Nano Lett. 10, 1359-1363 (2010)
    • (2010) Nano Lett. , vol.10 , pp. 1359-1363
    • Nagashima, K.1
  • 33
    • 79955394646 scopus 로고    scopus 로고
    • A numerical study of the prospects of high efficiency ultra thin ZnxCd12xS/CdTe solar cell
    • Sharafat, M. D. A numerical study of the prospects of high efficiency ultra thin ZnxCd12xS/CdTe solar cell. Chalcogenide Lett. 8, 263-272 (2011)
    • (2011) Chalcogenide Lett. , vol.8 , pp. 263-272
    • Sharafat, M.D.1
  • 34
    • 70449730669 scopus 로고    scopus 로고
    • Fundamentals of zinc oxide as a semiconductor
    • Janotti, A. et al. Fundamentals of zinc oxide as a semiconductor. Rep. Prog. Phys. 72, 126501 (2009)
    • (2009) Rep. Prog. Phys. , vol.72 , pp. 126501
    • Janotti, A.1
  • 35
    • 0004005306 scopus 로고    scopus 로고
    • JohnWiley & Sons Press, New Jersey
    • Sze, S. M. et al. Physics of semiconductor device. 79-242 (JohnWiley & Sons Press, New Jersey, 2007)
    • (2007) Physics of Semiconductor Device , pp. 79-242
    • Sze, S.M.1


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