Oxygen electromigration induced nonvolatile resistance switching at Ag/ La2CuO4+x interface

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Shi, J P ^a   Zhao, Y G ^a   Zhang, H J ^a   Tian, H F ^a   Zhang, X P ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC TEMPERATURE; ELECTRONIC TRANSPORT PROPERTIES; HETEROSTRUCTURES; LOW-RESISTANCE STATE; NON-VOLATILE; OXYGEN CONTENT; OXYGEN DIFFUSION; OXYGEN MIGRATION; RESISTANCE SWITCHING; SCHOTTKY BARRIERS; TEMPERATURE DEPENDENCE;

COPPER OXIDES; ELECTROMIGRATION; HETEROJUNCTIONS; LANTHANUM; SCHOTTKY BARRIER DIODES; TRANSPORT PROPERTIES;

OXYGEN;

EID: 67049132739     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133353     Document Type: Article

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