Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

Nature Materials

Volumn 12, Issue 7, 2013, Pages 617-621

  Wen, Zheng ^a,b   Li, Chen ^a   Wu, Di ^a   Li, Aidong ^a   Ming, Naiben ^a  

^a NANJING UNIVERSITY   (China)

^b NINGXIA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ELECTRODES; HETEROJUNCTIONS; MODULATION;

ELECTRORESISTANCE; FERROELECTRIC BARRIERS; FERROELECTRIC FIELDS; FERROELECTRIC TUNNEL JUNCTIONS; NON-VOLATILE MEMORY; REPRODUCIBILITIES; RESISTANCE SWITCHING; THEORETICAL AND EXPERIMENTAL;

FERROELECTRICITY;

EID: 84879412323     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat3649     Document Type: Article

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