AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 137-140

  Anderson, T J ^a   Ren, F ^a   Voss, L ^a   Hlad, M ^a   Gila, B P ^a   Pearton, S J ^a   Kim, J ^a   Lin, J ^a   Bove, P ^b   Lahreche, H ^b   Thuret, J ^b   Langer, R ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Picogiga International SAS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CARRIER CONFINEMENTS; HIGHER YIELD; INTRINSIC TRANSCONDUCTANCE; KNEE VOLTAGE; MAXIMUM FREQUENCY OF OSCILLATIONS; RF CHARACTERISTICS; RF PERFORMANCE;

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PARAMETER EXTRACTION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887484818     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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