AlGaN/GaN high electron mobility transistors on Si/SiO 2/poly-SiC substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 5, 2006, Pages 2302-2305

  Anderson, T J ^a   Ren, F ^a   Voss, L ^a   Hlad, M ^a   Gila, B P ^a   Covert, L ^a   Lin, J ^a   Pearton, S J ^a   Bove, P ^b   Lahreche, H ^b   Thuret, J ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Picogiga International SAS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTH; POLY-SIC SUBSTRATES; SMART CUT™ PROCESS;

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; SILICON CARBIDE; THERMAL CONDUCTIVITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33749318878     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2348730     Document Type: Article

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