Performance of AlGaN/GaN High Electron Mobility Transistors at Nanoscale Gate Lengths

Journal of Nanoscience and Nanotechnology

Volumn 2, Issue 3-4, 2002, Pages 325-332

  Johnson, J W ^a,e   Ren, F ^a   Pearton, S J ^a   Baca, A G ^b   Han, J ^c   Dabiran, A M ^d   Chow, P P ^d  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Yale University   (United States)

^d SVT ASSOCIATES   (United States)

^e NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GALLIUM; GALLIUM NITRIDE;

AMPLIFIER; ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTRON; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR;

ALUMINUM; AMPLIFIERS; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTRONS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; MATERIALS TESTING; MINIATURIZATION; NANOTECHNOLOGY; TRANSISTORS;

EID: 0012301843     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2002.092     Document Type: Article

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