Channel length-dependent charge detrapping on threshold voltage shift of amorphous InGaZnO TFTs under dynamic bias stress

IEEE Transactions on Electron Devices

Volumn 60, Issue 5, 2013, Pages 1689-1694

  Park, Suehye ^a   Cho, Edward Namkyu ^a   Yun, Ilgu ^a  

^a Yonsei University   (South Korea)

Author keywords

Channel length variation; Charge detrapping; Electrical instability; InGaZnO (a IGZO); Thin film transistors (TFTs)

Indexed keywords

CHANNEL LENGTH; CHARGE DE-TRAPPING; ELECTRICAL INSTABILITY; INGAZNO; THIN-FILM TRANSISTOR (TFTS);

ELECTRIC FIELDS; THIN FILM TRANSISTORS;

THRESHOLD VOLTAGE;

EID: 84887067371     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2253466     Document Type: Article

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