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Current Applied Physics

Volumn 11, Issue 4, 2011, Pages 1015-1019

Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors

(3) Cho, Edward Namkyu a Kang, Jung Han a Yun, Ilgu a

a Yonsei University (South Korea)

Author keywords

Contact resistance; InGaZnO; Short channel effects; Thin film transistors

Indexed keywords

CHANNEL LENGTH; CHANNEL WIDTHS; CONTACT RESISTANCE EFFECTS; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; INGAZNO; SCALING EFFECTS; SHORT-CHANNEL DEVICES; SHORT-CHANNEL EFFECT; SUBTHRESHOLD SWING;

AMORPHOUS FILMS; DRAIN CURRENT; ELECTRIC PROPERTIES; THIN FILM TRANSISTORS;

CONTACT RESISTANCE;

EID: 79957544626 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2011.01.017 Document Type: Article

Times cited : (43)

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