Analysis of narrow width effects in polycrystalline silicon thin film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 28-32

  Zan, Hsiao Wen ^a   Chang, Ting Chang ^b   Shih, Po Sheng ^a   Peng, Du Zen ^a   Huang, Tiao Yuan ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ION IMPLANTATION; OXIDES; PHOSPHORUS; POLYSILICON; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE STRUCTURES;

DEEP STATE DENSITY; GRAIN BOUNDARY TRAP DENSITY; NARROW WIDTH EFFECT; POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR; TAIL STATE DENSITY;

THIN FILM TRANSISTORS;

EID: 0038343609     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.28     Document Type: Article

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