SCOPUS 정보 검색 플랫폼

Volumn 75, Issue , 2012, Pages 93-96

Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors

(3) Park, Suehye a Cho, Edward Namkyu a Yun, Ilgu a

a Yonsei University (South Korea)

Author keywords

Channel resistance; InGaZnO; Subgap density of states; Thin film transistors

Indexed keywords

AMORPHOUS INGAZNO; CHANNEL LENGTH; CHANNEL RESISTANCE; CHANNEL WIDTHS; FIELD-EFFECT MOBILITIES; GATE INSULATOR; INGAZNO; SUBGAP DENSITY OF STATE (DOS); THIN-FILM TRANSISTOR (TFTS); TRANSPARENT PROPERTIES;

SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS;

ELECTRIC PROPERTIES;

EID: 84863312310 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2012.04.029 Document Type: Article

Times cited : (10)

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