Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Microelectronics Reliability

Volumn 52, Issue 9-10, 2012, Pages 2215-2219

  Park, Suehye ^a   Cho, Edward Namkyu ^a   Yun, Ilgu ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INGAZNO; BIAS STRESS; CHANNEL LENGTH; DEGRADATION BEHAVIOR; GATE-BIAS STRESS; HIGH MOBILITY; LOW-TEMPERATURE FABRICATION; NEGATIVE GATE; POSITIVE GATE BIAS; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS;

THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

THIN FILMS;

EID: 84866742404     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.07.005     Document Type: Article

References (21)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature 432 2004 488 492
2. 4 channel fabricated by room temperature rf-magnetron sputtering Appl Phys Lett 89 2006 112123
3. M.E. Lopes, H.L. Gomes, M.C.R. Medeiros, P. Barquinha, L. Pereira, and E. Fortunato Gate-bias stress in amorphous oxide semiconductors thin-film transistors Appl Phys Lett 95 2009 063502
4. A. Suresh, and J.F. Muth Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors Appl Phys Lett 92 2008 033502
5. E.N. Cho, J.H. Kang, C.E. Kim, P. Moon, and I. Yun Analysis of bias stress instability in amorphous InGaZnO thin-film transistors IEEE Trans Dev Mater Reliab 11 2011 112 117
6. S. Lee, S. Park, S. Kim, Y. Jeon, K. Jeon, and J.-H. Park Extraction of subgap density of states in amorphous InGaZnO thin-film transistors by using multifrequency capacitance-voltage characteristics IEEE Electron Dev Lett 31 2010 231 233
7. 4 thin-film transistors Appl Phys Lett 92 2008 133512
8. S. Lee, K. Jeon, J.-H. Park, S. Kim, D. Kong, and D.M. Kim Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress Appl Phys Lett 95 2009 132101
9. K.-S. Son, H.-S. Kim, W.-J. Maeng, J.-S. Jung, K.-H. Lee, and T.-S. Kim The effect of dynamic bias stress on the photon-enhanced threshold voltage instability of amorphous HfInZnO thin-film transistors IEEE Electron Dev Lett 32 2011 164 166
10. S.I. Kim, J.-S. Park, C.J. Kim, J.C. Park, I. Song, and Y.S. Park High reliable and manufacturable gallium indium zinc oxide thin-film transistors using the double layers as an active layer J Electrochem Soc 156 2009 H184 H187
11. J.-S. Park, T.-W. Kim, D. Stryakhilev, J.-S. Lee, S.-G. An, and Y.-S. Pyo Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors Appl Phys Lett 95 2009 013503
12. S. Park, E.N. Cho, and I. Yun Effects of alternating pulse bias stress on amorphous InGaZnO thin-film transistors ECS Trans 45 2012 111 117
13. F.R. Libsch, and J. Kanicki Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors Appl Phys Lett 62 1993 1286 1288
14. M.J. Powell Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors Appl Phys Lett 43 1983 597 599
15. H.-H. Hsieh, and C.-C. Wu Scaling behavior of ZnO transparent thin-film transistors Appl Phys Lett 89 2006 041109
16. S.D. Brotherton, C. Glasse, C. Glaister, P. Green, F. Rohlfing, and J.R. Ayres High-speed, short-channel polycrystalline silicon thin-film transistors Appl Phys Lett 84 2004 293 295
17. ATLAS user's manual. Santa Clara, CA: Silvaco International; 2008.
18. S. Park, E.N. Cho, and I. Yun Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors Solid-State Electron 75 2012 93 96
19. E.N. Cho, J.H. Kang, and I. Yun Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors Microelectron Reliab 51 2011 1792 1795
20. Y.-C. Chen, T.-C. Chang, H.-W. Li, S.-C. Chen, J. Lu, and W.-F. Chung Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress Appl Phys Lett 96 2010 262104
21. T.-C. Fung, K. Abe, H. Kumomi, J. Kanicki, P-11: DC/AC Electrical Instability of R.F. Sputter Amorphous In-Ga-Zn-O TFTs. In: SID Tech Dig. vol. 40; 2009. p. 1117-1120.