Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors

ECS Transactions

Volumn 45, Issue 7, 2012, Pages 111-117

  Park, S ^a   Cho, E N ^a   Yun, I ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EXPONENTIAL FUNCTIONS; GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILM CIRCUITS; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS; ZINC COMPOUNDS;

AMORPHOUS INGAZNO; AMORPHOUSINGAZNO (A-IGZO); CHANNEL LENGTH; HIGH MOBILITY; NEGATIVE GATE; STRESS TIME; STRETCHED EXPONENTIAL FUNCTIONS; THRESHOLD VOLTAGE SHIFTS;

THIN FILM TRANSISTORS;

EID: 84866733720     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3701531     Document Type: Conference Paper

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