Impact of oxygen flow rate on the instability under positive bias stresses in DC-sputtered amorphous InGaZnO thin-film transistors

IEEE Electron Device Letters

Volumn 33, Issue 1, 2012, Pages 62-64

  Kim, Sungchul ^a   Jeon, Yong Woo ^a   Kim, Yongsik ^a   Kong, Dongsik ^a   Jung, Hyun Kwang ^a   Bae, Min Kyung ^a   Lee, Je Hun ^b   Ahn, Byung Du ^b   Park, Sei Yong ^b   Park, Jun Hyun ^b   Park, Jaewoo ^b   Kwon, Hyuck In ^c   Kim, Dong Myong ^a   Kim, Dae Hwan ^a  

^a Kookmin University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Chung Ang University   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO) thin film transistors (TFTs); charge trapping; electrical stability; O 2 flow rate (OFR); subgap density of states (DOS)

Indexed keywords

BIAS STRESS; DENSITY OF STATE; ELECTRICAL INSTABILITY; ELECTRICAL STABILITY; ELECTRON TRAPPING; OXYGEN FLOW RATES; POSITIVE BIAS; POSITIVE GATE BIAS; SUBGAP DENSITY OF STATES (DOS); THRESHOLD VOLTAGE SHIFTS; TRANSFER CURVES; TRAP STATE;

AMORPHOUS FILMS; CHARGE TRAPPING; FLOW RATE; GALLIUM; INDIUM; STABILITY; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84655167983     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2173153     Document Type: Article

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