Nanoscale Schottky behavior of Au islands on TiO2 probed with conductive atomic force microscopy

Applied Physics Letters

Volumn 103, Issue 17, 2013, Pages

  Lee, Hyunsoo ^a,b   Keun Lee, Young ^a,b   Nghia Van, Trong ^a,b   Young Park, Jeong ^a,b  

^a Institute for Basic Science   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT-VOLTAGE PLOTS; ELECTRICAL CHARACTERS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BEHAVIORS; SCHOTTKY JUNCTIONS; SELF-ASSEMBLED PATTERNS; SEMICONDUCTOR FILMS;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; NANOTECHNOLOGY; THERMIONIC EMISSION; TITANIUM DIOXIDE;

GOLD;

EID: 84887032045     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4826140     Document Type: Article

References (40)

1. G. D. J. Smit, S. Rogge, and T. M. Klapwijk, Appl. Phys. Lett. 81 (20), 3852 (2002). 10.1063/1.1521251
2. M. Hugelmann and W. Schindler, Appl. Phys. Lett. 85 (16), 3608 (2004). 10.1063/1.1808871
3. C. Donolato, J. Appl. Phys. 95 (4), 2184 (2004). 10.1063/1.1641516
4. J. Osvald, Solid State Commun. 138 (1), 39 (2006). 10.1016/j.ssc.2006.01. 029
5. F. Giannazzo, F. Roccaforte, and V. Raineri, Microelectron. Eng. 84 (3), 450 (2007). 10.1016/j.mee.2006.10.057
6. J. Oh and R. J. Nemanich, J. Appl. Phys. 92 (6), 3326 (2002). 10.1063/1.1499545
7. M. A. Poggi, E. D. Gadsby, L. A. Bottomley, W. P. King, E. Oroudjev, and H. Hansma, Anal. Chem. 76 (12), 3429 (2004). 10.1021/ac0400818
8. G. Binnig, C. F. Quate, and C. Gerber, Phys. Rev. Lett. 56 (9), 930 (1986). 10.1103/PhysRevLett.56.930
9. H. Lee, W. Shin, J. W. Choi, and J. Y. Park, J. Phys. D: Appl. Phys. 45 (27), 275301 (2012). 10.1088/0022-3727/45/27/275301
10. S. Kwon, S. Choi, H. J. Chung, H. Yang, S. Seo, S. H. Jhi, and J. Y. Park, Appl. Phys. Lett. 99 (1), 013110 (2011). 10.1063/1.3609317
11. D. Rugar, H. J. Mamin, P. Guethner, S. E. Lambert, J. E. Stern, I. Mcfadyen, and T. Yogi, J. Appl. Phys. 68 (3), 1169 (1990). 10.1063/1.346713
12. Y. Sugimoto, P. Pou, M. Abe, P. Jelinek, R. Perez, S. Morita, and O. Custance, Nature 446 (7131), 64 (2007). 10.1038/nature05530
13. S. S. Tan, Z. Y. Tang, X. R. Liang, and N. A. Kotov, Nano Lett. 4 (9), 1637 (2004). 10.1021/nl0492077
14. D. G. Xu, G. D. Watt, J. N. Harb, and R. C. Davis, Nano Lett. 5 (4), 571 (2005). 10.1021/nl048218x
15. H. Cohen, C. Nogues, D. Ullien, S. Daube, R. Naaman, and D. Porath, Faraday Discuss. 131 (46), 367 (2006). 10.1039/b507706k
16. J. Y. Park, S. Maier, B. Hendriksen, and M. Salmeron, Mater. Today 13 (10), 38 (2010). 10.1016/S1369-7021(10)70185-1
17. M. Tominaga, A. Ohira, Y. Yamaguchi, and M. Kunitake, J. Electroanal. Chem. 566 (2), 323 (2004). 10.1016/j.jelechem.2003.11.056
18. J. Y. Park and Y. B. Qi, Scanning 32 (5), 257 (2010). 10.1002/sca.20182
19. J. Y. Park, Y. B. Qi, P. D. Ashby, B. L. M. Hendriksen, and M. Salmeron, J. Chem. Phys. 130 (11), 114705 (2009). 10.1063/1.3089789
20. I. Tanaka, I. Kamiya, H. Sakaki, N. Qureshi, S. J. Allen, and P. M. Petroff, Appl. Phys. Lett. 74 (6), 844 (1999). 10.1063/1.123402
21. L. Fang, J. Y. Park, Y. Cui, P. Alivisatos, J. Shcrier, B. Lee, L. W. Wang, and M. Salmeron, J. Chem. Phys. 127 (18), 184704 (2007). 10.1063/1.2786993
22. H. Altuntas, A. Bengi, U. Aydemir, T. Asar, S. S. Cetin, I. Kars, S. Altindal, and S. Ozcelik, Mater. Sci. Semicond. Process. 12 (6), 224 (2009). 10.1016/j.mssp.2009.12.001
23. D. Mardare and G. I. Rusu, Mater. Sci. Eng., B 75 (1), 68 (2000). 10.1016/S0921-5107(00)00387-1
24. P. Zeman and S. Takabayashi, Surf. Coat. Technol. 153 (1), 93 (2002). 10.1016/S0257-8972(01)01553-5
25. Y. K. Lee, C. H. Jung, J. Park, H. Seo, G. A. Somorjai, and J. Y. Park, Nano Lett. 11 (10), 4251 (2011). 10.1021/nl2022459
26. Y. K. Lee, J. Park, and J. Y. Park, J. Phys. Chem. C 116 (35), 18591 (2012). 10.1021/jp303099w
27. Y. K. Lee, J. Lee, H. Lee, J. Y. Lee, and J. Y. Park, Appl. Phys. Lett. 102 (12), 123112 (2013). 10.1063/1.4799156
28. B. S. Jeong, D. P. Norton, and J. D. Budai, Solid-State Electron. 47 (12), 2275 (2003). 10.1016/S0038-1101(03)00210-7
29. S. K. Kim, W. D. Kim, K. M. Kim, C. S. Hwang, and J. Jeong, Appl. Phys. Lett. 85 (18), 4112 (2004). 10.1063/1.1812832
30. A. F. Werner Stöber, J. Colloid Interface Sci. 26 (1), 62 (1968). 10.1016/0021-9797(68)90272-5
31. T. N. Van, Y. K. Lee, J. Lee, and J. Y. Park, Langmuir 29 (9), 3054 (2013). 10.1021/la304478s
32. G. Rothenberger, D. Fitzmaurice, and M. Gratzel, J. Phys. Chem. 96 (14), 5983 (1992). 10.1021/j100193a062
33. J. Y. Park, H. Lee, J. R. Renzas, Y. W. Zhang, and G. A. Somorjai, Nano Lett. 8 (8), 2388 (2008). 10.1021/nl8012456
34. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
35. J. M. Shannon, Solid-State Electron. 19 (6), 537 (1976). 10.1016/0038-1101(76)90019-8
36. G. D. J. Smit, S. Rogge, and T. M. Klapwijk, Appl. Phys. Lett. 80 (14), 2568 (2002). 10.1063/1.1467980
37. F. A. Padovani and R. Stratton, Solid-State Electron. 9 (7), 695 (1966). 10.1016/0038-1101(66)90097-9
38. E. M. Bourim and D. W. Kim, Curr. Appl. Phys. 13 (3), 505 (2013). 10.1016/j.cap.2012.09.022
39. H. Kim, S. Hong, and D. W. Kim, Appl. Phys. Lett. 100 (2), 022901 (2012). 10.1063/1.3675630
40. R. Buzio, A. Gerbi, A. Gadaleta, L. Anghinolfi, F. Bisio, E. Bellingeri, A. S. Siri, and D. Marre, Appl. Phys. Lett. 101 (24), 243505 (2012). 10.1063/1.4771603