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Applied Physics Letters

Volumn 99, Issue 1, 2011, Pages

Probing nanoscale conductance of monolayer graphene under pressure

(7) Kwon, Sangku a Choi, Sunghyun a Chung, H J b Yang, Heejun b Seo, Sunae c Jhi, Seung Hoon d Young Park, Jeong a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Sejong University (South Korea)

d Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED PRESSURE; CONDUCTIVE PROBE ATOMIC FORCE MICROSCOPIES; CROSSOVER BEHAVIOR; DENSITY OF STATE; DIPOLE FIELDS; GRAPHENE LAYERS; MECHANICAL DEFORMATION; MECHANICAL STRESS; NANO SCALE; SINGLE LAYER; TWO-REGIME;

DEFORMATION; MONOLAYERS; STRESSES;

GRAPHENE;

EID: 79960529462 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3609317 Document Type: Article

Times cited : (34)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.