High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy

Microelectronic Engineering

Volumn 84, Issue 3, 2007, Pages 450-453

  Giannazzo, F ^a   Roccaforte, F ^a   Raineri, V ^a  

^a CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; METALLIC FILMS; SEMICONDUCTOR DEVICES; SPECTROSCOPIC ANALYSIS;

CONDUCTIVE ATOMIC FORCE MICROSCOPE (C-AFM); CURRENT LOCALIZATION; ENERGY RESOLUTION CHARACTERIZATION; INHOMOGENEOUS METAL-SEMICONDUCTORS SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 33846919569     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.057     Document Type: Article

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