NO2 sensing performance of p-type intermediate size porous silicon by a galvanostatic electrochemical etching method

Electrochimica Acta

Volumn 113, Issue , 2013, Pages 354-360

  Li, Mingda ^a   Hu, Ming ^a   Yan, Wenjun ^a   Ma, Shuangyun ^a   Zeng, Peng ^a   Qin, Yuxiang ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Electrochemical etching; Intermediate size pore; Porous silicon; Room temperature

Indexed keywords

CHEMICAL SENSORS; ELECTROCHEMICAL ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAS DETECTORS; MICROSTRUCTURE; NITROGEN OXIDES; PASSIVATION; SCANNING ELECTRON MICROSCOPY;

FIELD EMISSION SCANNING ELECTRON MICROSCOPES; HIGHLY ORDERED PORES; INTERMEDIATE SIZE PORE; LARGE SPECIFIC SURFACE AREAS; P TYPE SEMICONDUCTOR; REPRODUCIBILITIES; SENSING MECHANISM; SENSING PERFORMANCE;

POROUS SILICON;

EID: 84886190435     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2013.09.120     Document Type: Article

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