Metal-assisted etching of p-type silicon under anodic polarization in HF solution with and without H2O2

Electrochimica Acta

Volumn 55, Issue 3, 2010, Pages 903-912

  Chourou, Mohamed L ^a   Fukami, Kazuhiro ^a   Sakka, Tetsuo ^a   Virtanen, Sannakaisa ^b   Ogata, Yukio H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Anodic polarization; Hydrogen peroxide; Metal assisted etching; Porous silicon

Indexed keywords

AG NANOPARTICLE; APPLIED CURRENT; CHEMICAL OXIDATION; ETCHING SOLUTIONS; HF SOLUTIONS; MACROPORES; METAL NANOPARTICLES; MICROPOROUS LAYERS; OXIDIZING AGENTS; P-TYPE SI; P-TYPE SILICON; PORE DEPTH; PORE DIAMETERS; PORE FORMATION; PORE MORPHOLOGY; PT NANOPARTICLES; SI WAFER;

ANODIC POLARIZATION; DISSOLUTION; ETCHING; HYDROFLUORIC ACID; HYDROGEN PEROXIDE; METALS; MICROPOROSITY; MORPHOLOGY; NANOPARTICLES; OXIDATION; PALLADIUM; PLATINUM; PORE SIZE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SILVER;

POROUS SILICON;

EID: 70549098190     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2009.09.048     Document Type: Article

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