Towards a deeper comprehension of the interaction mechanisms between mesoporous silicon and NO2

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 465-471

  Boarino, L ^a   Rocchia, M ^b   Baratto, C ^c   Rossi, A M ^a   Garrone, E ^b   Borini, S ^a   Geobaldo, F ^b   Comini, E ^c   Faglia, G ^c   Sberveglieri, G ^c   Amato, G ^a  

^a Thin Film Lab   (Italy)

^b POLITECNICO DI TORINO   (Italy)

^c UNIVERSITY OF BRESCIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CHEMICAL SENSORS; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN OXIDES; POROUS SILICON;

ABSORPTION BANDS; HIGH ELECTRONIC AFFINITY; INTERACTION MECHANISM; MESOPOROUS SILICON; POROUS SILICON NITROGEN DIOXIDE SENSOR; SURFACE DYNAMICS;

SURFACE PHENOMENA;

EID: 0034427624     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<465::AID-PSSA465>3.0.CO;2-G     Document Type: Article

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