Room temperature NO 2-sensing properties of Ti-added nonstoichiometric tungsten oxide nanowires

Sensors and Actuators, B: Chemical

Volumn 162, Issue 1, 2012, Pages 244-250

  Qin, Yuxiang ^a   Sun, Xuebin ^a   Li, Xiao ^a   Hu, Ming ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Gas sensor; Nanowires; NO 2; Titanium; Tungsten oxide

Indexed keywords

ADDITIVE CONCENTRATIONS; CHEMICAL SYNTHESIS; GAS SENSING; INTRODUCTION PROCEDURE; MAXIMUM VALUES; NANOWIRE SURFACE; NANOWIRE SYNTHESIS; NONSTOICHIOMETRIC TUNGSTEN OXIDE; OPERATING TEMPERATURE; P TYPE SEMICONDUCTOR; RAPID RESPONSE; RESPONSE CHARACTERISTIC; ROOM TEMPERATURE; SENSING PROPERTY; SENSOR RESPONSE; SOLVOTHERMALLY; TEMPERATURE DEPENDENT; TI ADDITION; TI ADDITIVES; TUNGSTEN OXIDE;

CHEMICAL SENSORS; GAS DETECTORS; NITROGEN OXIDES; OXIDES; TEMPERATURE; TITANIUM; TUNGSTEN COMPOUNDS;

NANOWIRES;

EID: 84862818865     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2011.12.074     Document Type: Article

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