A comparative electrochemical study of iron deposition onto n- and p-type porous silicon prepared from lightly doped substrates

Electrochimica Acta

Volumn 50, Issue 27, 2005, Pages 5340-5348

  Harraz, Farid A ^a,b   Sakka, Tetsuo ^a   Ogata, Yukio H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b CENTRAL METALLURGICAL RESEARCH AND DEVELOPMENT INSTITUTE CMRDI   (Egypt)

Author keywords

Flat band potential; Iron electrodeposition; Mott Schottky plot; Porous silicon; Silicon solution interface

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTRODEPOSITION; HYDROGEN; INTERFACES (MATERIALS); IRON; POROUS SILICON; SCANNING ELECTRON MICROSCOPY;

ELECTROCHEMICAL IMPEDANCE MEASUREMENTS; FLAT BAND POTENTIAL; IRON ELECTRODEPOSITION; MOTT-SCHOTTKY PLOT; SILICON/SOLUTION INTERFACE;

ELECTROCHEMISTRY;

EID: 24644483635     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2005.03.013     Document Type: Article

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