Effect of etching current density on microstructure and NH 3-sensing properties of porous silicon with intermediate-sized pores

Electrochimica Acta

Volumn 108, Issue , 2013, Pages 167-174

  Li, Mingda ^a   Hu, Ming ^a   Zeng, Peng ^a   Ma, Shuangyun ^a   Yan, Wenjun ^a   Qin, Yuxiang ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Electrochemical etching; Intermediate sized pores; Porous silicon

Indexed keywords

BOND STRENGTH (CHEMICAL); CHEMICAL DETECTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAS DETECTORS; MICROSTRUCTURE; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SILICON;

FIELD EMISSION SCANNING ELECTRON MICROSCOPES; GAS SENSING MECHANISM; HIGHLY ORDERED PORES; INTERMEDIATE-SIZED PORES; LARGE SPECIFIC SURFACE AREAS; SENSING PERFORMANCE; SENSING RESPONSE; SURFACE CHEMICALS;

ELECTROCHEMICAL ETCHING;

EID: 84884215400     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2013.06.106     Document Type: Article

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