Improvement of stability and recovery time in porous-silicon-based NO 2 sensor

Sensors and Actuators, B: Chemical

Volumn 102, Issue 2, 2004, Pages 195-197

  Massera, E ^a   Nasti, I ^a   Quercia, L ^a   Rea, I ^a   Di Francia, G ^a  

^a ENEA CR Portici   (Italy)

Author keywords

Gas sensors; Nitrogen dioxide; NO2; Porous silicon; Pre treatment

Indexed keywords

CHEMICAL SENSORS; CHEMISORPTION; ENVIRONMENTAL PROTECTION; ETCHING; FABRICATION; GAS PERMEABLE MEMBRANES; HYSTERESIS; IMPREGNATION; NITROGEN OXIDES; POLLUTION; POROUS SILICON;

ETCHING SOLUTIONS; HYSTERESIS EFFECTS; POROUS SILICON MEMBRANES (PSM); ROOM TEMPERATURE (RT);

SILICON SENSORS;

EID: 4344700099     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2004.04.018     Document Type: Article

References (8)

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