Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Journal of Applied Physics

Volumn 114, Issue 14, 2013, Pages

  Huang, Sen ^a   Wei, Ke ^a   Tang, Zhikai ^b   Yang, Shu ^b   Liu, Cheng ^b   Guo, Lei ^c   Shen, Bo ^c   Zhang, Jinhan ^a   Kong, Xin ^a   Liu, Guoguo ^a   Zheng, Yingkui ^a   Liu, Xinyu ^a   Chen, Kevin J ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

2-D ELECTRON GAS (2DEG); ALGAN/GAN HETEROSTRUCTURES; HIGH RESOLUTION X RAY DIFFRACTION; HIGH TEMPERATURE STABILITY; MODERATELY HIGH TEMPERATURE; NEAR SURFACE REGIONS; PASSIVATION STRUCTURE; TEMPERATURE DEPENDENT;

ELECTRON GAS; GALLIUM; GALLIUM NITRIDE; HETEROJUNCTIONS; OXIDATION; PASSIVATION; PHOTOELECTRONS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

PHASE INTERFACES;

EID: 84886032176     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824829     Document Type: Article

References (17)

1. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999). 10.1063/1.369664
2. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001). 10.1109/16.906451 (Pubitemid 32271174)
3. G. Koley, V. Tilak, L. F. Eastman, and M. G. Spencer, IEEE Trans. Electron Devices 50, 886 (2003). 10.1109/TED.2003.812489
4. J. Bernát, P. Javorka, M. Marso, and P. Kordoš, Appl. Phys. Lett. 83, 5455 (2003). 10.1063/1.1637154
5. D. J. Chen, Y. Q. Tao, C. Chen, R. Zhang, Y. D. Zheng, M. J. Wang, B. Shen, Z. H. Li, G. Jiao, and T. S. Chen, Appl. Phys. Lett. 89, 252104 (2006). 10.1063/1.2408657 (Pubitemid 46035141)
6. M. Tajima, J. Kotani, and T. Hashizume, Jpn. J. Appl. Phys., Part 1 48, 020203 (2009). 10.1143/JJAP.48.020203
7. M. Eickelkamp, M. Weingarten, L. Rahimzadeh Khoshroo, N. Ketteniss, H. Behmenburg, M. Heuken, D. Donoval, A. Chvála, P. Kordoš, H. Kalisch, and A. Vescan, J. Appl. Phys. 110, 084501 (2011). 10.1063/1.3647589
8. S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, IEEE Electron Device Lett. 34, 193 (2013). 10.1109/LED.2012.2229106
9. S. Huang, Q. Jiang, S. Yang, C. Zhou, and K. J. Chen, IEEE Electron Device Lett. 33, 516 (2012). 10.1109/LED.2012.2185921
10. Z. Tang, S. Huang, Q. Jiang, S. Liu, C. Liu, and K. J. Chen, IEEE Electron Device Lett. 34, 366 (2013). 10.1109/LED.2012.2236638
11. D. Wellekens, R. Venegas, X. Kang, M. Zahid, T. Wu, D. Marcon, P. Srivastava, M. V. Hove, and S. Decoutere, in Solid-State Device Research Conference (ESSDERC, 2012), 17-21 September (2012), pp. 302-305.
12. S. Arulkumaran, T. Egawa, H. Ishikawa, and T. Jimbo, Appl. Phys. Lett. 80, 2186 (2002). 10.1063/1.1461420 (Pubitemid 34635964)
13. M. Higashiwaki, S. Chowdhury, B. L. Swenson, and U. K. Mishra, Appl. Phys. Lett. 97, 222104 (2010). 10.1063/1.3522649
14. M. J. Wang, B. Shen, F. J. Xu, Y. Wang, J. Xu, S. Huang, Z. J. Yang, K. Xu, and G. Y. Zhang, Appl. Phys. A 88, 715 (2007). 10.1007/s00339-007-4034-5 (Pubitemid 47149851)
15. S. Ganguly, J. Verma, G. Li, T. Zimmermann, H. Xing, and D. Jena, Appl. Phys. Lett. 99, 193504 (2011). 10.1063/1.3658450
16. D. J. Chen, K. X. Zhang, Y. Q. Tao, X. S. Wu, J. Xu, R. Zhang, Y. D. Zheng, and B. Shen, Appl. Phys. Lett. 88, 102106 (2006). 10.1063/1.2186369
17. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, and L. F. Eastman, J. Appl. Phys. 87, 334 (2000). 10.1063/1.371866