High temperature behaviour of GaN-on-Si high power MISHEMT devices

European Solid-State Device Research Conference

Volumn , Issue , 2012, Pages 302-305

  Wellekens, Dirk ^a   Venegas, Rafael ^a   Kang, Xuanwu ^a   Zahid, Mohammed ^a   Wu, Tian Li ^a   Marcon, Denis ^a   Srivastava, Puneet ^a   Van Hove, Marleen ^a   Decoutere, Stefaan ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BI-LAYER; DC PARAMETERS; DEVICE PERFORMANCE; HIGH TEMPERATURE; MIS-HEMT; OPERATING CONDITION; TEMPERATURE DEPENDENCE; VDMOS DEVICES;

GALLIUM NITRIDE; GATE DIELECTRICS;

SILICON;

EID: 84870623913     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2012.6343393     Document Type: Conference Paper

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