Temperature-dependent strain relaxation of the AlGaN barrier in AlGaN/GaN heterostructures with and without Si3N4 surface passivation

Applied Physics Letters

Volumn 88, Issue 10, 2006, Pages

  Chen, D J ^a   Zhang, K X ^a   Tao, Y Q ^a   Wu, X S ^a   Xu, J ^a   Zhang, R ^a   Zheng, Y D ^a   Shen, B ^b  

^a NANJING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SILICON COMPOUNDS; STRAIN; TEMPERATURE; TENSILE PROPERTIES; X RAY DIFFRACTION;

ELECTRON GAS CONCENTRATION; SURFACE PASSIVATION;

ALUMINUM COMPOUNDS;

EID: 33644922938     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2186369     Document Type: Article

References (16)

1. N. Maeda, K. Tsubaki, T. Saitoh, and N. Kobayashi, Appl. Phys. Lett. 79, 1634 (2001).
2. T. Egawa, H. Ishikawa, M. Umeno, and T. Jimbo, Appl. Phys. Lett. 76, 121 (2000).
3. N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida, and N. Kobayashi, Jpn. J. Appl. Phys., Part 2 38, L987 (1999).
4. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, IEEE Electron Device Lett. 21, 268 (2000).
5. S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, IEEE Trans. Electron Devices 48, 465 (2001).
6. B. Shen, T. Someya, and Y. Arakawa, Appl. Phys. Lett. 76, 2746 (2000).
7. R. R. Reeber and K. Wang, MRS Internet J. Nitride Semicond. Res. 6, 1 (2001).
8. M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski, and T. D. Moustakas, J. Appl. Phys. 76, 4909 (1994).
9. G. A. Slack and S. F. Bartram, J. Appl. Phys. 46, 89 (1975).
10. W. M. Yim and R. J. Paff, J. Appl. Phys. 45, 1456 (1974).
11. M. Meada and K. Ikeda, J. Appl. Phys. 83, 3685 (1998).
12. S. Einfeldt, V. Kirchner, H. Heinke, M. Diebelberg, S. Figge, K. Vogler, and D. Hommel, J. Appl. Phys. 88, 7029 (2000).
13. C.-Z. Wang, E.-G. Wang, and Q. Y. Dai, J. Appl. Phys. 83, 1975 (1998).
14. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).
15. F. Bernardini and V. Fiorentini, Phys. Rev. B 56, R10024 (1997).
16. N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998).