Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects

Journal of Applied Physics

Volumn 114, Issue 13, 2013, Pages

  Mukherjee, Bablu ^a   Tok, Eng Soon ^a   Sow, Chorng Haur ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; GOLD COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOBELTS; PHOTOCONDUCTIVITY; SCANNING ELECTRON MICROSCOPY; SELENIUM COMPOUNDS; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

ELECTRONIC CHARACTERISTICS; ELECTRONIC TRANSPORT PROPERTIES; MORPHOLOGY AND STRUCTURES; OPTO-ELECTRONIC SWITCHES; PHOTOCURRENT CHARACTERISTICS; PHOTOCURRENT MEASUREMENT; THREE ORDERS OF MAGNITUDE; VISIBLE-WAVELENGTH RANGE;

GERMANIUM COMPOUNDS;

EID: 84885454551     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4823779     Document Type: Article

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