Symmetrical current-voltage characteristic of a metal-semiconductor-metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Semiconductor Science and Technology

Volumn 27, Issue 1, 2012, Pages

  Elhadidy, H ^a,b   Sikula, J ^a   Franc, J ^c  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b Mansoura University   (Egypt)

^c CHARLES UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CDTE; FIELD DEPENDENCE; I - V CURVE; IMAGE FORCE; LOW BIAS VOLTAGE; MATERIAL STRUCTURE; METAL SEMICONDUCTOR METAL; METAL-SEMICONDUCTOR-METAL STRUCTURES; P TYPE SEMICONDUCTOR; P-TYPE; PARAMETER RETRIEVAL; RICHARDSON CONSTANT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; VOLTAGE DISTRIBUTION; VOLTAGE DROP; ZERO FIELDS;

ACTIVATION ENERGY; CADMIUM TELLURIDE; DROPS; METALS; RESISTORS; SCHOTTKY BARRIER DIODES; VANADIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84855467354     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/1/015006     Document Type: Article

References (26)

1. Wang D, Lu J G, Otten C J and Buhro W E 2003 Appl. Phys. Lett. 83 5280
2. Lee Y H, Yoo J M and Park D 2005 Appl. Phys. Lett. 86 033110
3. Fan Z and Lu J G 2005 Appl. Phys. Lett. 86 032111
4. Heo Y W, Tien L C, Norton D P and Pearton S J 2004 Appl. Phys. Lett. 85 3107
5. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley) chapter 5
6. Gnatyuk V A, Aoki T, Hatanaka Y and Vlasenko O I 2005 Appl. Surf. Sci. 244 528-32
7. Cui Y, Duan X F, Hu J T and Lieber C M 2000 J. Phys. Chem. B 104 5213
8. Chung S W, Yu J Y and Heath J R 2000 Appl. Phys. Lett. 76 2068
9. Hu S F, Wong W Z, Liu S S, Wu Y C, Sung C L, Huang T Y and Yangm T J 2002 Adv. Mater. 16 736
10. Rhoderick E H 1982 IEE Proc. I 129 1-14
11. Appenzeller J, Radosavljevic M, Knoch J and Avouris P 2004 Phys. Rev. Lett. 92 048301
12. Zhang Z Y, Jin C H, Liang X L, Chen Q and Peng L M 2006 Appl. Phys. Lett. 88 073102
13. Elhadidy H, Franc J, Belas E, Hlidek P, Moravec P, Grill R and Hoschl P 2008 J. Electron. Mater. 37 1219-24
14. Elhadidy H, Franc J, Moravec P, Hoschl P and Fiederle M 2007 Semicond. Sci. Technol. 22 537-42
15. Saucedo E, Franc J, Elhadidy H, Horodysky P, Ruiz C M, Bermdez V and Sochinskii N V 2008 J. Appl. Phys. 103 094901
16. Chattopadhyay P 1996 J. Phys. D 29 823
17. Franc J, Hoschl P, Belas E, Grill R, Hlidek P, Moravec P and Bok J 1999 Nucl. Instrum. Methods A 434 146
18. Andreev A, Grmela L, Moravec P, Bosman G and Sikula J 2010 Semicond. Sci. Technol. 25 055016
19. Szeles C S 2004 Phys. Status Solidi b 241 783-90
20. Turkevych I, Grill R and Moravec P 2002 Semicond. Sci. Technol. 17 1064-6
21. Van Meirhaeghe R L, van de Walle R, Lafkre W H and Cardon F 1990 J. Appl. Phys. 70 2200-3
22. Touskova J and Kuzel K 1976 Phys. Status Solidi a 36 747-55
23. Rakhshani A E, Makdisi Y, Mathew X and Mathews N R 1998 Phys. Status Solidi a 168 177-87
24. Babentsov V, Franc J, Elhadidy H, Fauler A, Fiederle M and James R B 2007 J. Mater. Res. 22 3249-54
25. Toyama H, Yamazato M, Higa A, Maehama T, Ohno R and Toguchi M 2005 Nucl. Sci. Symp. Conf. Rec. 3 1395-8
26. Toyama H, Higa A, Yamazato M, Maehama T, Ohno R and Toguchi M 2006 Japan. J. Appl. Phys. 45 8842-7