Electronic transport property of single-crystalline hexagonal tungsten trioxide nanowires

Applied Physics Letters

Volumn 94, Issue 26, 2009, Pages

  Wang, S J ^a   Lu, W J ^a   Cheng, G ^a   Cheng, K ^a   Jiang, X H ^a   Du, Z L ^a  

^a HENAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ASSEMBLING PROCESS; ASYMMETRIC BARRIERS; BARRIER HEIGHTS; ELECTRICAL TRANSPORT; ELECTRONIC TRANSPORT PROPERTIES; PT ELECTRODE; SCHOTTKY BARRIERS; SI SUBSTRATES; SINGLE-CRYSTALLINE; SURFACE STATE; TUNGSTEN TRIOXIDE;

ADSORPTION; ELECTRIC FIELDS; NANOWIRES; PLATINUM; SCHOTTKY BARRIER DIODES; THERMAL EVAPORATION; TRANSPORT PROPERTIES; TUNGSTEN;

ELECTRIC WIRE;

EID: 67649958217     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3158953     Document Type: Article

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