Local photocurrent mapping as a probe of contact effects and charge carrier transport in semiconductor nanowire devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 2172-2177

  Gu, Y ^a   Romankiewicz, J P ^a   David, J K ^a   Lensch, J L ^a   Lauhon, L J ^a   Kwak, E S ^b   Odom, T W ^b  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRE DEVICES; OPTICAL GENERATION REGION; SCANNING PHOTOCURRENT MICROSCOPY (SPCM); SCHOTTKY;

ARGON; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; PHOTOCURRENTS;

SEMICONDUCTOR DEVICES;

EID: 33746488331     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2216717     Document Type: Article

References (15)

1. R. Martel et al. Appl. Phys. Lett. 73, 2447 (1998).
2. K. Balasuhramanian et al., Appl. Phys. Lett. 84, 2400 (2004);
3. Y. Ahn, J. Dunning, and J. Park, Nano Lett. 5, 1367 (2005).
4. Y. Ou et al., Appl. Phys. Lett. 87, 043111 (2005).
5. F. Galluzzi, J. Phys. D 18, 685 (1985).
6. D. Caputo, G. de Cesare, and M. Tucci, Sens. Actuators, A 88, 139 (2001).
7. N. Beck et al., J. Appl. Phys. 79, 9361 (1996).
8. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
9. J. B. D. Soole and H. Schumacher, IEEE J. Quantum Electron. 27, 737 (1991).
10. R A. Kroger, G. Diemer, and H. A. Klasens, Phys. Rev. 103, 279 (1956).
11. D. C. Look, J. Appl. Phys. 45, 492 (1974).
12. 0 are the concentration of photogcnerated and thermal-equilibrium carrier concentration, respectively), a space-charge region forms at the point of optical injection, and this reduces the electric field outside the space-charge region, i.e., most of the external bias drops across the space-charge region. As a result, photogenerated carriers are separated inside the space-charge region via drift and diffusion process and subsequently diffuse towards the corresponding electrode. A description of the electric field distribution inside the space-charge region will require significant theoretical modeling beyond the scope of this presentation. See also Y. Ou, J. P. Romankiewicz, J. K. David, J. L. Lensch, and L. J. Lauhon. Nano Lett. 6, 948 (2006).
13. C. Weber et al., Z. Phys. B: Condens. Matter 72, 379 (1988).
14. R. B. Stephens. Phys. Rev. B 29, 3283 (1984).
15. The difference in the electron and hole mobilities may vary as a function of electric field.