The unsaturated photocurrent controlled by two-dimensional barrier geometry of a single ZnO nanowire Schottky photodiode

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Cheng, Gang ^a,b   Li, Zhaohan ^a   Wang, Shujie ^a   Gong, Hechun ^a   Cheng, Ke ^a   Jiang, Xiaohong ^a   Zhou, Shaomin ^a   Du, Zuliang ^a   Cui, Tian ^b   Zou, Guangtian ^b  

^a HENAN UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; ELECTROPHORESIS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; PHOTOCURRENTS; PHOTODIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ZINC COMPOUNDS; SEPARATION; TWO DIMENSIONAL; ULTRAVIOLET RADIATION; ZINC ALLOYS; ZINC OXIDE;

BARRIER GEOMETRY; DEPLETION LAYERS; DIELECTROPHORESIS; DIFFERENTIAL CONDUCTIVITY; ELECTRON-HOLE PAIRS; I-V CURVES; SCHOTTKY BARRIER; SCHOTTKY PHOTODIODES; ULTRA-VIOLET LIGHT; ZNO NANOWIRE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 52949090002     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2989129     Document Type: Article

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