Photoelectrical properties in thin films of (Ge20Se 80)0.98Sn0.02 Glassy alloy

Journal of Optoelectronics and Advanced Materials

Volumn 5, Issue 5, 2003, Pages 1203-1208

  Thakur, A ^a   Chandel, P S ^a   Sharma, V ^a   Goyal, N ^a   Saini, G S S ^a   Tripathi, S K ^a  

^a PANJAB UNIVERSITY   (India)

Author keywords

Chalcogenide; Ge Se Sn; Localized states; Photoelectrical; Recombination

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; GERMANIUM COMPOUNDS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; QUENCHING; TEMPERATURE MEASUREMENT; THERMODYNAMICS; THIN FILMS; VACUUM;

CHALCOGENIDES; GLASSY ALLOYS; LOCALIZED STATES;

OPTICAL GLASS;

EID: 0348136073     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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