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Volumn 232-234, Issue , 1998, Pages 554-559

Structural changes during photo-induced and thermal crystallization processes in evaporated amorphous GeSe2 films by Raman scattering

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EID: 0347718282     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00523-7     Document Type: Article
Times cited : (9)

References (15)
  • 3
    • 0003782774 scopus 로고
    • M.A. Kastner, G.A. Thomas, S.R. Ovshinsky (Eds.), Plenum, New York
    • K. Murase, K. Inoue, in: M.A. Kastner, G.A. Thomas, S.R. Ovshinsky (Eds.), Disordered Semiconductors, Plenum, New York, 1987, p. 297.
    • (1987) Disordered Semiconductors , pp. 297
    • Murase, K.1    Inoue, K.2
  • 6
    • 0012972062 scopus 로고
    • K. Murase, K. Inoue, O. Matsuda, in: W.B. Fowler, N. Itoh (Eds.), Proceedings of the US-Japan Seminar on Atomic Processes Induced by Electronic Excitation in Non-Metallic Solids, Nagoya, Japan, World Scientific, Singapore, 1990, p. 531; also in Rev. Solid State Sci. 4 (1990) 661-667.
    • (1990) Rev. Solid State Sci. , vol.4 , pp. 661-667


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.