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Volumn 111, Issue 10, 2012, Pages

Electrical and photoresponse properties of Co 3O 4 nanowires

(7) Varghese, Binni a Mukherjee, Bablu a Karthik, K R G b Jinesh, K B c Mhaisalkar, S G b,c Soon Tok, Eng a Haur Sow, Chorng a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT LEVELS; GLOBAL IRRADIATION; IMPEDANCE SPECTROSCOPY; NANOWIRE DEVICES; P-TYPE CONDUCTIVITY; PHOTOCURRENT CHARACTERISTICS; PHOTOCURRENT MEASUREMENT; PHOTON ENERGY; PHOTORESPONSES; SPATIALLY RESOLVED; SUBBANDS;

ELECTRIC PROPERTIES; ENERGY GAP; NANOWIRES; PHOTOCURRENTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84862154475 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4712497 Document Type: Conference Paper

Times cited : (50)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.