Field emission from GeSe2 nanowalls

Applied Physics Letters

Volumn 98, Issue 11, 2011, Pages

  Zhang, Yanjun ^a,b   Li, Hui ^a,b   Jiang, Li ^a   Liu, Huibiao ^a   Shu, Chunying ^a   Li, Yuliang ^a   Wang, Chunru ^a  

^a INSTITUTE OF CHEMISTRY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE SPACING; CHEMICAL VAPOR DEPOSITION PROCESS; FE PROPERTIES; FIELD ENHANCEMENT FACTOR; FOWLER-NORDHEIM BEHAVIOR; IN-FIELD; NANOWALLS; QUANTUM TUNNELING; SEMICONDUCTOR NANOMATERIALS; SINGLE-CRYSTALLINE; TURN-ON FIELD;

CHEMICAL VAPOR DEPOSITION;

FIELD EMISSION;

EID: 79952943506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3569147     Document Type: Article

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