Two-step method for the deposition of AlN by radio frequency sputtering

Thin Solid Films

Volumn 545, Issue , 2013, Pages 149-153

  Monteagudo Lerma, L ^a   Valdueza Felip, S ^b   Nunez Cascajero A ^a   Gonzalez Herraez M ^a   Monroy, E ^b   Naranjo, F B ^a  

^a UNIVERSITY OF ALCALÁ   (Spain)

^b CEA GRENOBLE   (France)

Author keywords

Aluminum nitride; High resolution; Semiconductors; Sputtering; Substrate bias; Two step method; X ray diffraction

Indexed keywords

DEPOSITION PARAMETERS; HIGH RESOLUTION; INTERFACE DEGRADATION; RADIO FREQUENCY SPUTTERING; STRUCTURAL AND MORPHOLOGICAL PROPERTIES; SUBSTRATE BIAS; SUBSTRATE TEMPERATURE; TWO STEP METHOD;

ALUMINUM NITRIDE; CURVE FITTING; GRAIN GROWTH; INTERFACES (MATERIALS); SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION;

DEPOSITION;

EID: 84884984300     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.07.062     Document Type: Article

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