Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 297, Issue 2, 2006, Pages 321-325

  Kamber, Derrick S ^a   Wu, Yuan ^a   Haskell, Benjamin A ^a   Newman, Scott ^a   DenBaars, Steven P ^a   Speck, James S ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

Author keywords

A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Aluminum nitride; B2. Semiconducting aluminum compounds

Indexed keywords

ALUMINUM NITRIDE; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

HETEROEPITAXIAL GROWTH; HYDRIDE VAPOR PHASE EPITAXY; NOMARSKI OPTICAL CONTRAST MICROSCOPY;

THICK FILMS;

EID: 33845567605     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.097     Document Type: Article

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