GaN-based light-emitting diode with sputtered AlN nucleation layer

IEEE Photonics Technology Letters

Volumn 24, Issue 4, 2012, Pages 294-296

  Yen, Cheng Hsiung ^a   Lai, Wei Chih ^a   Yang, Ya Yu ^a   Wang, Chun Kai ^b   Ko, Tsun Kai ^c   Hon, Schang Jing ^c   Chang, Shoou Jinn ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c EPISTAR CORPORATION   (Taiwan)

Author keywords

GaN based light emitting diodes (LEDs); nucleation layer sputtered AlN

Indexed keywords

ALN NUCLEATION LAYERS; CRYSTAL QUALITIES; ESD TEST; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; IN-SITU; NUCLEATION LAYERS; OPTICAL CHARACTERISTICS; OUTPUT POWER; REVERSE LEAKAGE CURRENT; X RAY ROCKING CURVE;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; NUCLEATION;

LIGHT EMITTING DIODES;

EID: 84863028653     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2177654     Document Type: Article

References (15)

1. S. Nakamura, T. Mukai, and M. Senoh, "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett., vol. 64, no. 13, pp. 1687-1689, Mar. 1, 1994.
2. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN-GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 278-283, Mar./Apr. 2002. (Pubitemid 34659057)
3. S. J. Chang, et al., "400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul./Aug. 2002. (Pubitemid 35327626)
4. Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Muka, "Ultrahigh efficiency white light emitting diodes," Jpn. J. Appl. Phys., vol. 45, no. 41, pp. L1084-L1086, Oct. 2006. (Pubitemid 47245064)
5. F. A. Pounce and D. P. Bour, "Nitride-based semiconductors for blue and green light-emitting devices," Nature, vol. 386, pp. 351-359, Mar. 1997. (Pubitemid 27154469)
6. X. H. Wu, et al., "Dislocation generation in GaN heteroepitaxy," J. Cryst. Growth, vols. 189-190, nos. 1-2, pp. 231-243, Jun. 1998. (Pubitemid 128420749)
7. S. W. Lee, et al., "Lattice strain in bulk GaN epilayers grown on CrN/sapphire template," Appl. Phys. Lett., vol. 94, no. 8, pp. 082105-1-082105-3, Feb. 2009.
8. C. H. Kuo, et al., "Nitride-based light-emitting diodes with p-AlInGaN surface layers," IEEE Electron. Dev. Lett., vol. 52, no. 10, pp. 2346-2349, Oct. 2005. (Pubitemid 46446479)
9. S. J. Chang, et al., "Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact," IEEE Photon. Technol. Lett., vol. 16, no. 4, pp. 1002-1004, Apr. 2004.
10. B. Heying, et al., "Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films," Appl. Phys. Lett., vol. 68, no. 5, pp. 643-645, Jan. 1996. (Pubitemid 126683916)
11. P. Perlin, C. Jauberthie-Carillon, J. P. Itie, A. S. Miguel, I. Grzegory, and A. Polian, "Raman scattering and X-ray-absorption spectroscopy in gallium nitride under high pressure," Phys. Rev. B, vol. 45, no. 1, pp. 83-89, Jan. 1992.
12. C. Kisielowski, et al., "Strain-related phenomena in GaN thin films," Phys. Rev. B, vol. 54, no. 24, pp. 17745-17753, Dec. 1996.
13. J. Xu, et al., "Effects of polarization-field tuning in GaInN light-emitting diodes," Appl. Phys. Lett., vol. 99, no. 4, pp. 041105-1-041105-3, Jul. 2011.
14. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, "Auger recombination in InGaN measured by photoluminescence," Appl. Phys. Lett., vol. 91, no. 14, pp. 141101-1-141101-3, Oct. 2007.
15. N. F. Gardner, et al., "Blue-emitting InGaN-GaN double- heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2," Appl. Phys. Lett., vol. 91, no. 24, pp. 243506-1-243506-3, Dec. 2007.