Structural properties of AlN grown on sapphire at plasma self-heating conditions using reactive magnetron sputter deposition

Journal of Electronic Materials

Volumn 39, Issue 8, 2010, Pages 1146-1151

  Seo, Hui Chan ^a,b   Petrov, Ivan ^a,b   Kim, Kyekyoon ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Aluminum nitride; Self heating condition; Sputter deposition

Indexed keywords

ALN; ALN FILMS; CROSS-SECTIONAL TEM; CRYSTALLINITIES; DIFFERENT SUBSTRATES; EPITAXIAL ALN; EPITAXIAL RELATIONSHIPS; FILM DEPOSITION; FILM QUALITY; GROWTH PRESSURE; ION ENERGIES; LATTICE PARAMETERS; LOW TEMPERATURES; MAGNETRON SPUTTER DEPOSITION; POLE FIGURE; SELF-HEATING; SELF-HEATING CONDITION; SPUTTERED SPECIES; TEM; XRD PEAKS;

ALUMINUM; ALUMINUM COATINGS; ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; ELECTRIC DISCHARGES; HEATING; MAGNETRONS; NITRIDES; PLASMA DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE;

EID: 77954623177     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1275-4     Document Type: Article

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