Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 5057-5060

  Yang, J H ^a   Kang, S M ^b   Dinh, D V ^a   Yoon, D H ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

AIN; GaN; MOCVD; Photo luminescence; Raman spectroscopy; X ray diffraction

Indexed keywords

AIN; ALN; ALN BUFFER; DEPOSITION METHODS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GAN; GAN EPITAXIAL GROWTH; GAN LAYERS; LAYER THICKNESS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; OPTICAL ANALYSIS; RADIO FREQUENCY MAGNETRON SPUTTERING; SI(111) SUBSTRATE; SINGLE DOMAINS; STRUCTURAL AND OPTICAL PROPERTIES;

ALUMINA; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; BUFFER LAYERS; DIFFRACTION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FIELD EMISSION; FIELD EMISSION MICROSCOPES; GALLIUM NITRIDE; LIGHT; LUMINESCENCE; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SPECTRUM ANALYSIS; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 65649091014     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.089     Document Type: Article

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