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Volumn 311, Issue 3, 2009, Pages 459-462

Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target

(7) Vashaei, Z a Aikawa, T a Ohtsuka, M a Kobatake, H a Fukuyama, H a Ikeda, S b Takada, K b

a TOHOKU UNIVERSITY (Japan)

b TOKUYAMA CORPORATION (Japan)

Author keywords

A1. Crystal structure; A3. RF sputtering; B2. Aluminum nitride

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM COMPOUNDS; ARGON; CORUNDUM; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; GROWTH (MATERIALS); INERT GASES; LIGHT METALS; NITRIDES; NITROGEN; PLASMAS;

A1. CRYSTAL STRUCTURE; A3. RF SPUTTERING; ALN; ALN LAYERS; B2. ALUMINUM NITRIDE; C SAPPHIRES; CRYSTALLINE QUALITIES; CRYSTALLINITY; NITROGEN GAS; RADIO FREQUENCIES; RATE INCREASE; RF-POWER; SPUTTERING PARAMETERS; SPUTTERING PRESSURES;

ALUMINUM NITRIDE;

EID: 59749104873 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.046 Document Type: Article

Times cited : (66)

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