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Volumn 39, Issue 12, 2008, Pages 1710-1713

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD

(8) Luo, Weijun a Wang, Xiaoliang a Guo, Lunchun a Xiao, Hongling a Wang, Cuimei a Ran, Junxue a Li, Jianping a Li, Jinmin a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

AlN; Crack; GaN; MOCVD; Si(1 1 1)

Indexed keywords

BUFFER LAYERS; CRACKING (CHEMICAL); EPILAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL MICROSCOPY; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; VAPOR DEPOSITION; X RAY ANALYSIS;

ALN; ALN BUFFERS; ATOMIC FORCES; CRACK DENSITIES; CRYSTALLINE PROPERTIES; GAN; GAN EPILAYERS; HIGH TEMPERATURES; INTER-LAYERS; MOCVD; ORGANIC CHEMICAL VAPOR DEPOSITIONS; SI(1 1 1); X-RAY DIFFRACTIONS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 56049109821 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2008.01.042 Document Type: Article

Times cited : (35)

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