Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 310-315

  Taniyasu, Yoshitaka ^a   Kasu, Makoto ^a   Makimoto, Toshiki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; RESIDUAL STRESSES; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION;

DEFECT-FREE REGIONS; MISORIENTATIONS; TENSILE STRAIN; THREADING DISLOCATIONS (TD);

DISLOCATIONS (CRYSTALS);

EID: 33846442038     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.032     Document Type: Article

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