Twinning superlattice formation in GaAs nanowires

ACS Nano

Volumn 7, Issue 9, 2013, Pages 8105-8114

  Burgess, Tim ^a   Breuer, Steffen ^a   Caroff, Philippe ^a   Wong Leung, Jennifer ^a,b   Gao, Qiang ^a   Hoe Tan, Hark ^a   Jagadish, Chennupati ^a  

^a Research School of Physics and Engineering   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

crystal structure; gallium arsenide; III V semiconductors; nanowire; superlattice; twin planes; zincblende

Indexed keywords

DIAMETER DEPENDENCES; II-IV SEMICONDUCTORS; LINEAR RELATIONSHIPS; SEMICONDUCTOR NANOWIRE; SUPER-LATTICE STRUCTURES; SUPERLATTICE FORMATION; TWIN PLANES; ZINC-BLENDE;

CRYSTAL STRUCTURE; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SUPERLATTICES; ZINC SULFIDE;

NANOWIRES;

EID: 84884938532     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn403390t     Document Type: Article

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