Precursor evaluation for in situ InP nanowire doping

Nanotechnology

Volumn 19, Issue 44, 2008, Pages

  Borgstrom M T ^a   Norberg, E ^a   Wickert, P ^a   Nilsson, H A ^a   Tragardh J ^a   Dick, K A ^a   Statkute, G ^b   Ramvall, P ^a   Deppert, K ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

^b AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

DISTILLATION; ELECTRIC FIELDS; ELECTRIC WIRE; GROWTH (MATERIALS); LIGHT EMITTING DIODES; NANOWIRES;

DIMETHYLZINC; DOPANT PRECURSORS; GATE VOLTAGES; GROWTH CONDITIONS; IN-SITU; INP NANOWIRES; MOLAR FRACTIONS; NANOWIRE GROWTHS; P-TYPE DOPING; RECTIFYING BEHAVIORS; TRANSPORT MEASUREMENTS;

DOPING (ADDITIVES);

DIMETHYLZINC; NANOWIRE; TETRAETHYLTIN; TIN DERIVATIVE; UNCLASSIFIED DRUG; ZINC DERIVATIVE;

ARTICLE; ASYMMETRIC SYNTHESIS; CHANNEL GATING; DOPING; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; ELECTROSTIMULATION; EVALUATION; FIELD FLOW FRACTIONATION; GAP JUNCTION; GROWTH CURVE; GROWTH RATE; IN SITU HYBRIDIZATION; INSULATOR ELEMENT; LIGHT EMITTING DIODE; MEASUREMENT; NANOANALYSIS; PRIORITY JOURNAL;

EID: 58149235128     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/44/445602     Document Type: Article

References (32)

1. Thelander C et al 2006 Mater. Today 9 28
2. Bakkers E P A M, Borgström M T and Verheijen M A 2007 MRS Bull. 32 117
3. Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
4. Huang Y, Duan X F, Cui Y, Lauhon L J, Kim K H and Lieber C M 2001 Science 294 1313
5. Doh Y J, van Dam J A, Roest A L, Bakkers E P A M, Kouwenhoven L P and De Franceschi S 2005 Science 309 272
6. De Franceschi S, van Dam J A, Bakkers E P A M, Feiner L F, Gurevich L and Kouwenhoven L P 2003 Appl. Phys. Lett. 83 344
7. Bryllert T, Wernersson L E, Löwgren T and Samuelson L 2006 Nanotechnology 17 227
8. Duan X, Huang Y, Cui Y, Wang J and Lieber C M 2001 Nature 409 66
9. van Weert M H M, Wunnicke O, Roest A L, Eijkemans T J, Yu Silov A, Haverkort J E M, t'Hooft G W and Bakkers E P A M 2006 Appl. Phys. Lett. 88 043109
10. Cimpoiasu E, Stern E, Klie R, Munden R A, Cheng G and Reed M A 2006 Nanotechnology 17 5735
11. Haraguchi K, Katsuyama T, Hiruma K and Ogawa K 1992 Appl. Phys. Lett. 60 745
12. Gudiksen M S, Lauhon L J, Wang J, Smith D C and Lieber C M 2002 Nature 415 617
13. Minot E D, Kelkensberg F, van Kouwen M, van Dam J A, Kouwenhoven L P, Zwiller V, Borgström M T, Wunnicke O, Verheijen M A and Bakkers E P A M 2007 Nano Lett. 7 367
14. Qian F, Gradecak S, Li Y, Wen C Y and Lieber C M 2005 Nano Lett. 5 2287
15. Svensson C P T, Mårtensson T, Trägårdh J, Larsson C, Rask M, Hessman D, Samuelson L and Ohlsson J 2008 Nanotechnology 19 305201
16. Huang Y, Duan X F and Lieber C M 2005 Small 1 142
17. Magnusson M H, Deppert K, Malm J O, Bovin J O and Samuelson L 1999 Nanostruct. Mater. 12 45
18. Yazawa M, Koguchi M and Hiruma K 1991 Appl. Phys. Lett. 58 1080
19. Cole S, Evans J S, Harlow M J, Nelson A W and Wong S 1988 Electron. Lett. 24 929
20. Stringfellow G B (ed) 1999 Organometallic Vapor Phase Epitaxy 2nd edn (San Diego: Academic Press)
21. Algra R, Verheijen M A, Borgström M T, Feiner L F, Immink G, van Enckevort W J P, Vlieg E and Bakkers E P A M 2008 arXiv:0807.1423v1
22. Thelander C, Mårtensson T, Björk M T, Ohlsson B J, Larsson M W, Wallenberg L R and Samuelson L 2003 Appl. Phys. Lett. 83 2052
23. Samuelson L, Omling P, Titze H and Grimmeiss H G 1981 J. Cryst. Growth 55 164
24. Ashcroft N W and Mermin N D 1976 Solid State Physics (Philadelphia: Saunders)
25. Cui Y, Duan X F, Hu J T and Lieber C M 2000 J. Phys. Chem. B 104 5213
26. Wunnicke O 2006 Appl. Phys. Lett. 89 083102
27. http://www.ioffe.rssi.ru/ - ref-separator -
28. Khanal D R and Wu J 2007 Nano Lett. 7 2778
29. Pearsall T P (ed) 2000 Properties, Processing and Applications of Indium Phosphide (London, UK: Institution of Engineering and Technology)
30. Wang D W, Chang Y L, Wang Q, Cao J, Farmer D B, Gordon R G and Dai H J 2004 J. Am. Chem. Soc. 126 11602
31. Pinzone C J, Gerrard N D, Dupuis R D, Ha N T and Luftman H S 1990 J. Appl. Phys. 67 6823
32. Trägärdh J, Hessman D, Borgström M T, Norberg E and Samuelson L 2008 at press