Thermodynamics of GaAs nanowire MBE growth with gold droplets

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3598-3608

  Chatillon, C ^a   Hodaj, F ^a   Pisch, A ^a  

^a UNIV GRENOBLE ALPES   (France)

Author keywords

A1. Thermodynamics; A2. Growth simulation; A3. Molecular beam epitaxy; B1. GaAs nanowires; B2. Au Ga As system

Indexed keywords

A1. THERMODYNAMICS; A2. GROWTH SIMULATION; A3. MOLECULAR BEAM EPITAXY; B1. GAAS NANOWIRES; B2. AU-GA-AS SYSTEM;

CONTACT ANGLE; CRYSTAL GROWTH; DROP FORMATION; ELECTRIC WIRE; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; SEMICONDUCTOR QUANTUM WIRES; THERMODYNAMICS; X RAY DIFFRACTION;

SEMICONDUCTING GALLIUM;

EID: 67649836254     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.05.009     Document Type: Article

References (11)

1. Wagner R.S., and Ellis W.C. Appl. Phys. Lett. 4 (1964) 89-90
2. Chatillon C., Harmand J.C., and Alexandre F. J. Cryst. Growth 130 (1993) 451-458
3. Shen J.Y., and Chatillon C.J. Cryst. Growth 106 (1990) 553-565
4. A. Pisch, (optimisation) private communication.
5. Nebol'sin V.A., and Shchetinin A.A. Inorg. Mater. 39 (2003) 1050-1055
6. Vassent J.L., Marty A., Gilles B., and Chatillon C. Vacuum 64 (2002) 65-85
7. Patriarche G., Glass F., Tchernycheva M., Sartel C., Largeau L., and Harmand J.-C. Nano Lett. 8 (2008) 1638-1643
8. Wang Z.Q., and Stroud D. Phys. Rev. B 42 (1990) 5353-5356
9. Xue X.M., Jiang H.G., Sui Z.T., Ding B.Z., and Hu Z.Q. Metall. Mater. Trans. B 27B (1996) 71-79
10. Tchernycheva M., Harmand J.-C., Patriarche G., Travers L., and Cirlin G.E. Nanotechnology 17 (2006) 4025-4030
11. Harmand J.-C., Patriarche G., Péré-Laperne N., Mérat-Combes M.N., Travers L., and Glas F. Appl. Phys. Lett. 87 (2005) 203101-1-203101-3