Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 20, 2009, Pages

  Dubrovskii, V G ^a,b   Sibirev, N V ^a   Cirlin, G E ^a,b   Soshnikov, I P ^a,b   Chen, W H ^c   Larde, R ^c   Cadel, E ^c   Pareige, P ^c   Xu, T ^d   Grandidier, B ^d   Nys, J P ^d   Stievenard, D ^d   Moewe, M ^e   Chuang, L C ^e   Chang Hasnain, C ^e  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITÉ ET INSA DE ROUEN   (France)

^d INSTITUT D ELECTRONIQUE   (France)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67449096761     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.205316     Document Type: Article

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