Phonon transport and thermoelectricity in defect-engineered InAs nanowires

Materials Research Society Symposium Proceedings

Volumn 1404, Issue , 2011, Pages 44-51

  Weathers, Annie ^a   Moore, Arden L ^a   Pettes, Michael T ^a   Salta, Daniel ^a,b   Kim, Jaehyun ^a   Dick, Kimberly ^c,d   Samuelson, Lars ^c   Linke, Heiner ^c   Caroff, Philippe ^e   Shi, Li ^a,b  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c LUND UNIVERSITY   (Sweden)

^d LUND UNIVERSITY   (Sweden)

^e INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FOUR-PROBE MEASUREMENT; LATTICE THERMAL CONDUCTIVITY; METAL-ORGANIC VAPOR PHASE EPITAXY; MICROFABRICATED DEVICES; PLATINUM RESISTANCE THERMOMETERS; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY (TEM);

DEFECTS; ELECTRODES; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; NANOWIRES; PHONONS; SILICON NITRIDE; SURFACE SCATTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

THERMAL CONDUCTIVITY;

EID: 84879403488     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2012.342     Document Type: Conference Paper

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