Twinning superlattice in VLS grown planar GaAs nanowires induced by impurity doping

2012 IEEE Photonics Conference, IPC 2012

Volumn , Issue , 2012, Pages 693-694

  Dowdy, Ryan ^a   Mohseni, Parsian ^a   Fortuna, Seth A ^a   Wen, Jianguo ^a   Li, Xiuling ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; IMPURITY DOPING; IN-SITU DOPING; TWIN PLANES; VAPOR-LIQUID-SOLID MECHANISM;

GALLIUM ARSENIDE; NANOWIRES; SEMICONDUCTING GALLIUM; VAPORS;

PHOTONICS;

EID: 84871751949     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPCon.2012.6358811     Document Type: Conference Paper

References (2)

1. "Realization of Unidirectional Planar GaAs Nanowires on (110) Substrates," R. Dowdy, D. Walko, S. A. Fortuna, and X. Li, IEEE Electron Device Letters, 33, 522-524 (2012).
2. "Planar GaAs Nanowires on GaAs (100) Substrates: Self-Aligned, Nearly Twin-Defect Free, and Transfer-Printable," S.A. Fortuna, J. Wen, I.S. Chun, and X. Li, Nano Letters 8 (12), 4421-4427 (2008).