GaN on Si technologies for power dwitching fevices

IEEE Transactions on Electron Devices

Volumn 60, Issue 10, 2013, Pages 3053-3059

  Ishida, Masahiro ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^b  

^a Automotive and Industrial Systems Company   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Electronic switching systems; Gallium nitride; Gate injection transistors; Inverters; Power transistors

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; CONDUCTIVITY MODULATION; ELECTRONIC SWITCHING SYSTEMS; GATE INJECTION TRANSISTORS; HIGH BREAKDOWN VOLTAGE; LOW COST FABRICATION; POWER TRANSISTORS; THREE-PHASE INVERTER;

ELECTRIC INVERTERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; POWER ELECTRONICS; SILICON; SWITCHING SYSTEMS;

GALLIUM ALLOYS;

EID: 84884815994     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2268577     Document Type: Article

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